High resolution method for the analysis of admittance spectroscopy data
High resolution method for the analysis of admittance spectroscopy data
复制标题
导纳谱数据分析的高分辨率方法
DOI：
10.1063/1.358562
复制
发表时间：
1995
影响因子：
3.2
通讯作者：
J. Weese
中科院分区：
文献类型：
--
作者：
D. Maier;P. Hug;M. Fiederle;C. Eiche;D. Ebling;J. Weese
有几种实验方法可以提供有关半导体深层热弛豫时间的信息。分析弛豫时间的温度依赖性，可以确定相应深能级的活化能和横截面。这种方法的一个基本问题是识别测量信号中的弛豫时间。在光感电流瞬态光谱和深能级瞬态光谱等时间相关测量的背景下，最近提出了吉洪诺夫正则化作为用于此目的的高分辨率方法。在这篇文章中，建议应用吉洪诺夫正则化来识别导纳谱数据中的热弛豫时间。使用模拟数据对该方法进行了测试和讨论。最后，分析了GaAs二极管的导纳谱数据。结果表明，普通导纳光谱装置的分辨率可以大大提高...
There are several experimental methods which give information about the thermal relaxation times of the deep levels in a semiconductor. Analyzing the temperature dependence of the relaxation times, the activation energy and the cross section of the corresponding deep levels can be determined. An essential problem of such methods is the identification of the relaxation times in the measured signal. In the context of time‐dependent measurements such as photoinduced current transient spectroscopy and deep level transient spectroscopy, Tikhonov regularization was recently proposed as a high resolution method for this purpose. In this contribution it is proposed to apply Tikhonov regularization in order to identify the thermal relaxation times in admittance spectroscopy data. The method is tested and discussed using simulated data. Finally, admittance spectroscopy data of a GaAs diode are analyzed. The results demonstrate that the resolution of an ordinary admittance spectroscopy setup can considerably be impr...