Transmission of low-energy electrons in boron-doped nanocrystalline diamond films
Transmission of low-energy electrons in boron-doped nanocrystalline diamond films
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硼掺杂纳米晶金刚石薄膜中低能电子的传输
DOI：
10.1063/1.1544648
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发表时间：
2003
影响因子：
3.2
通讯作者：
P. Pehrsson
中科院分区：
文献类型：
--
作者：
J. Yater;A. Shih;J. Butler;P. Pehrsson
用透射电子能谱研究了纳米晶化学气相沉积金刚石薄膜的低能电子输运和发射特性。特别地，测量了作为薄膜厚度和入射光束参数的函数的传输电子的强度和能量分布。在厚度为0.15和2.5μm、硼浓度相近的两种薄膜的测量中，探测到了低能量传输。两个样品的传输能量分布非常相似，并且与反射测量得到的结果几乎相同。对于较薄的薄膜(∼0.8−0.9 eV)，透射率分布的半最大值处的全宽度比较厚的薄膜(∼0.6−0.7 eV)略宽，最大透射率相似(∼3−5每个入射电子发射电子)。然而，产生低能量传输需要不同的束流能量。用蒙特卡罗模拟方法对能量相关数据进行了解释。
Transmission electron spectroscopy is used to examine the low-energy electron transport and emission properties of nanocrystalline chemical-vapor-deposited diamond films. In particular, the intensity and energy distribution of transmitted electrons are measured as a function of film thickness and incident-beam parameters. Low-energy transmission is detected in measurements from two films of thickness 0.15 and 2.5 μm with similar boron concentrations. The transmitted energy distributions are very similar for the two samples and are nearly identical to those obtained in reflection measurements. The full width at half maximum of the transmitted distribution is slightly broader for the thinner film (∼0.8−0.9 eV) than for the thicker film (∼0.6−0.7 eV), and the maximum transmission yields are similar (∼3−5 emitted electrons per incident electron). However, different beam energies are required to produce the low-energy transmission. The energy-dependent data is interpreted using Monte Carlo simulations along wi...