Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions
Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions
复制标题
低温区域选择性再生长在超浅侧壁砷化镓隧道结中的应用
DOI：
10.1063/1.1510162
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发表时间：
2002
影响因子：
4
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
Y. Oyama;T. Ohno;K. Tezuka;K. Suto;J. Nishizawa
采用低温（290℃）区域选择性再生的方法，在超高真空中间歇注入前体，制备了结面积约为10 ~ 8 cm2的超浅侧壁GaAs隧道结。在100 μm长条形结构下，正常台面方向的隧道结显示出创纪录的峰值电流密度达31000 A/cm2，负差分电导为- 1.4×10−5 S。隧道结的峰值电流密度表现出较强的侧壁取向依赖性，其数量级为{111}A>{110}>{111}B。
Low-temperature (290 °C) area-selective regrowth by the intermittent injection of precursors in an ultrahigh vacuum was applied for the fabrication of ultrashallow sidewall GaAs tunnel junctions with the junction area in the order of 10−8 cm2. The tunnel junctions on the normal mesa orientation have shown the record peak current density up to 31 000 A/cm2 and negative differential conductance of −1.4×10−5 S at 100 μm long strip structure. The peak current density of tunnel junctions has shown strong sidewall orientation dependences with the order of {111}A>{110}>{111}B.