Quantum spin Hall effect in graphene
Quantum spin Hall effect in graphene
复制标题
DOI：
10.1103/physrevlett.95.226801
复制
发表时间：
2005-11-25
影响因子：
8.6
通讯作者：
Mele, EJ
中科院分区：
文献类型：
--
作者：
Kane, CL;Mele, EJ
研究了自旋轨道相互作用对单层石墨烯低能电子结构的影响。我们发现，在一个实验上可访问的低温制度的对称性允许的自旋轨道势转换石墨烯从一个理想的二维半金属状态的量子自旋霍尔绝缘体。这种新的电子状态的物质是带隙的散装和支持运输的自旋和电荷的无隙边缘状态，传播在样品的边界。边缘态是非手性的，但它们对无序不敏感，因为它们的方向性与自旋相关。在这些边缘状态的自旋和电荷电导的计算和温度，化学势，Rashba耦合，无序和对称性破缺领域的影响进行了讨论。
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.