Thin films engineering of indium tin oxide:: Large area flat panel displays application
Thin films engineering of indium tin oxide:: Large area flat panel displays application
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DOI：
10.1016/j.surfcoat.2005.08.144
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发表时间：
2006-05-22
影响因子：
5.4
通讯作者：
Atamny, F
中科院分区：
文献类型：
--
作者：
Betz, U;Olsson, MK;Atamny, F
采用大面积直流磁控溅射系统制备了多种微结构的氧化铟锡（ITO）薄膜，用于平板显示器的制造。在约0.6 m(2)的衬底面积上获得了平均厚度约为100 +/- 3nm的高度均匀的ITO薄膜。通过室温沉积制备了具有少量晶位的薄膜结构，通过优化氢在薄膜中的掺入，获得了具有优异蚀刻性能的完全非晶结构，显著提高了ITO的结晶温度。这种样品的退火后产生了具有优异导电性和透明度的随机取向多晶结构。在溅射衬底温度为200℃的条件下制备的多晶ITO薄膜，在氧气量和工艺压力的控制下，在< 111 >和< 100 >方向上均具有优先晶粒取向的结构。研究了氧、压力及相关结构对薄膜宏观性能的影响。利用扫描电镜（SEM）和原子力显微镜（AFM）研究了膜的相/晶粒结构和表面粗糙度等形貌特征。晶粒尺寸约为30 nm的等轴晶粒结构层显示出超光滑的表面，RMS值约为1 nm。在550 nm波长下，具有优先晶粒取向的多晶层的比电阻率低至150 μ ω cm，透过率高于92%。(c) 2005 Elsevier B.V.版权所有
Indium Tin Oxide (ITO) thin films with a variety of microstructures were deposited using a large area conventional DC magnetron sputtering system for flat panel displays manufacturing. Highly uniform ITO films with an average thickness of similar to 100 +/- 3 nm on the similar to 0.6 m(2) substrate area were obtained. Film structures with small amounts of crystalline sites were produced by room temperature deposition, and an entirely amorphous structure with excellent etching properties was achieved through optimized incorporation of hydrogen in the film, providing a significant increase in the crystallization temperature of ITO. Post-annealing of such a sample yielded a randomly orientated polycrystalline structure with superior conductivity and transparency. The polycrystalline ITO films, produced at the Sputtering Substrate temperature of 200 degrees C, provided structures with preferential grain orientation in both < 111 > and < 100 > directions, controlled by the amount of oxygen and increased process pressure. The impact of oxygen and pressure with related structures on the macroscopic properties of the layers was studied. Morphological features of the films such as phase/grain structure and surface roughness were investigated using SEM and AFM. Layers with an equiaxed grain structure of about 30 nm crystal size revealed an ultra smooth surface with RMS values of about 1 nm. Specific resistivities as low as 150 mu Omega cm and transmittance values above 92% at 550 nm wavelength were obtained for polycrystalline layers with preferential grain orientation. (c) 2005 Elsevier B.V. All rights reserved.