Investigating a MOSFET Driver (Buffer) Circuit Transition Ringings Using an Analytical Model
Investigating a MOSFET Driver (Buffer) Circuit Transition Ringings Using an Analytical Model
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DOI：
10.1109/tpel.2014.2366431
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发表时间：
2015-09
影响因子：
6.7
通讯作者：
Buket Turan Azizoğlu;H. Karaca
中科院分区：
文献类型：
--
作者：
Buket Turan Azizoğlu;H. Karaca
本文提出了一种新的分析模型，介绍了提取的MOSFET的MOSFET驱动电路，并开发了一个MATLAB代码来模拟MOSFET驱动电路的文献中，观察其输出的振铃电容负载的情况下。仅针对高到低转换研究输出波形。栅极驱动电阻、印刷电路板布局的布线寄生效应以及MOSFET的特性都会影响MOSFET导通的延迟时间和驱动电路的性能。此外，MOSFET的电压应力以及电路的安全工作范围都取决于这些效应。这些影响在设计阶段都考虑到了。通过CST Design Studio软件的仿真结果与实验结果进行了比较。在MATLAB中求解的解析模型结果与仿真结果和实验结果一致。仿真工作表明，开发的MATLAB代码沿着与从图纸中提取的模型具有较少的收敛问题，也需要较少的仿真时间。
In this paper, a new analytical model introduced extracting from datasheet of a MOSFET and developed a MATLAB code for simulating a MOSFET driver circuit is proposed in the literature to observe the ringings of its output for capacitively loaded case. The output waveform is studied only for high-to-low transition. Gate drive resistance, wiring parasitics of the printed circuit board layout, and the characteristic properties of the MOSFET affect both the delay time of the MOSFET to become ON and performance of the driver circuit. Also, voltage stress of the MOSFET and therefore safe operating range for the circuit all depend on these effects. These effects are all considered in the design stage. The simulation results obtained from CST Design Studio software are compared with the results of experimental work. The analytical modeling results solved in the MATLAB are found congruent with the simulation results and experimental results as well. The simulation work showed that developed MATLAB code along with extracted models from datasheets has less convergence problems and also requires less simulation time.