Selective wet-etching and characterization of chalcogenide thin films in inorganic alkaline solutions
Selective wet-etching and characterization of chalcogenide thin films in inorganic alkaline solutions
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DOI：
10.1016/j.jnoncrysol.2006.10.069
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发表时间：
2007-05
影响因子：
3.5
通讯作者：
J. Orava;T. Wágner;M. Krbal;T. Kohoutek;M. Vlcek;M. Frumar
中科院分区：
文献类型：
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作者：
J. Orava;T. Wágner;M. Krbal;T. Kohoutek;M. Vlcek;M. Frumar
本文讨论了基于硫族化物的光致抗蚀剂在无机碱性溶液中的敏感性。研究了 As33S67、As33S50Se17、As33S33.5Se33.5、As33S17Se50 和 As33Se67 薄膜。使用NaOH、Na2S和(NH4)2S碱性溶液进行选择性湿法蚀刻。发现根据样品成分和所用蚀刻溶液的不同灵敏度。作为潜在光刻胶的硫族化物薄膜可以分为“高对比度”或“低对比度”，具体取决于样品成分、蚀刻剂类型及其浓度或入射光能量。
This paper deals with sensitivity of chalcogenide based photoresists in inorganic alkaline solutions. The thin films of As33S67, As33S50Se17, As33S33.5Se33.5, As33S17Se50, and As33Se67were studied. The selective wet-etching was carried out using NaOH, Na2S and (NH4)2S alkaline solutions. The different sensitivity according to sample composition and used etching solution were found. Chalcogenide films as a potential photoresists could be classified either as ‘high-contrast’ or ‘low-contrast’ depending on the sample compositions, type of etchant and its concentration or on incident light energy.