Turning ZrTe5 into a semiconductor through atom intercalation
Turning ZrTe5 into a semiconductor through atom intercalation
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通过原子嵌入将ZrTe5变成半导体
DOI：
10.1007/s11433-018-9329-4
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
ShaoChun Li
中科院分区：
文献类型：
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作者：
QiYuan Li;YangYang Lv;JingHui Wang;Song Bao;Wei Shi;Li Zhu;WeiMin Zhao;ChengLong Xue;ZhenYu Jia;LiBo Gao;Y. B. Chen;JinSheng Wen;YanFeng Chen;ShaoChun Li
本研究通过液氨法成功地将钾(K)原子嵌入到ZrTe5单晶中，并在低温下发现了半金属到半导体的转变。随着K浓度的增加，抗性异常峰逐渐被抑制，直至最终消失。同时，相应的霍尔电阻测量结果一致显示出信号反转。半金属到半导体的转变可以归因于原子嵌入引起的晶格膨胀，导致更大的能带间隙。
In this study we successfully intercalated potassium (K) atoms into single ZrTe5 crystals by liquid ammonia method, and found a semimetal-to-semiconductor transition at low temperatures in K-intercalated ZrTe5. As the K concentration increased, the resistance anomalous peak was gradually suppressed until finally disappearing. Whilst, the corresponding Hall resistance measurements consistently showed a sign reversal. The semimetal-to-semiconductor transition can be attributed to a lattice expansion induced by atom intercalation, leading to a larger energy band gap.