GaN–InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor
GaN–InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor
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在紧耦合喷头 (CCS) MOCVD 反应器中生长的 GaN-InGaN 量子阱和 LED 结构
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
C. Humphreys
中科院分区：
文献类型：
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作者：
E. Thrush;M. Kappers;P. Dawson;D. Graham;J. Barnard;M. E. Vickers;L. Considine;J. Mullins;C. Humphreys
紧密耦合喷淋头MOCVD反应器已经被用于使用两种不同的生长方式来生长GaN-InGaN量子阱（QW）结构和LED，其中一种生长方式中威尔斯在比势垒低的温度下生长，而另一种生长方式中两者在相同的温度下生长。一般来说，单温多量子威尔斯（MQW）的光学质量优于在两个温度下生长的结构的光学质量，但后者已被证明更容易优化以在更长的波长下操作。上级。改进的发射波长的均匀性已注意到的单温结构和XRD和低温PL测量的后者已经表明，高品质的结构已经实现。时间分辨PL已经表明，辐射载流子寿命随着量子威尔斯的铟含量而增加，使得较长波长的结构更容易受到来自非辐射复合的竞争。
A Close Coupled Showerhead MOCVD reactor has been used to grow GaN–InGaN quantum well (QW) structures and LEDs using two different growth regimes, one in which the wells are grown at a lower temperature than the barriers and the other in which both are grown at the same temperature. In general the optical quality of single temperature multi‐quantum wells (MQWs) are superior to that of structures grown at two temperatures but the latter have been proved easier to optimise for operation at longer wavelengths. Improved emission wavelength uniformity has been noted for the single temperature structures and XRD and low temperature PL measurements of the latter have indicated that high quality structures have been achieved. Time resolved PL has shown that the radiative carrier lifetime increases with the indium content of the quantum wells making longer wavelength structures more susceptible to competition from non‐radiative recombination.