Heterostructured CdS Buffer Layer for Sb2Se3 Thin Film Solar Cell
Heterostructured CdS Buffer Layer for Sb2Se3 Thin Film Solar Cell
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DOI：
10.1002/solr.202300417
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发表时间：
2023-06
期刊：
影响因子：
7.9
通讯作者：
A. Amin;Xiaomeng Duan;Jacob Wall;K. Khawaja;Wenjun Xiang;Lin Li;Feng Yan
中科院分区：
文献类型：
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作者：
A. Amin;Xiaomeng Duan;Jacob Wall;K. Khawaja;Wenjun Xiang;Lin Li;Feng Yan
硒化锑薄膜太阳能电池因其优异的各向异性电荷输运性能和优异的光吸收性能而成为研究的热点。特别地，器件性能严重依赖于垂直取向的Sb_2Se_3晶粒来促进光激发载流子输运。然而，晶体取向控制一直是Sb 2Se 3薄膜太阳能电池中的主要问题。在此，已经开发出一种新的策略，通过使用结构异质结CdS缓冲层来定制垂直于衬底的Sb_2Se_3带的晶体生长。异质结构CdS缓冲层由CdS纳米棒和纳米颗粒的双层形成。利用近空间升华法，在六方CdS纳米棒表面镀上一层立方CdS纳米颗粒，可以促进Sb 2Se 3条带的[211]和[221]方向生长。缓冲层/吸收层界面的改善、界面缺陷的减少以及复合损耗的增加使得器件效率提高了7.16%。这种新结构的异质结构CdS缓冲层可以调节Sb 2Se 3纳米带晶体生长，为进一步提高低维硫属化物薄膜太阳能电池效率铺平道路。
The antimony selenide thin film solar cells technology becomes promising due to its excellent anisotropic charge transport and brilliant light absorption capability. Especially, the device performance heavily relies on the vertically oriented Sb2Se3 grain to promote photoexcited carrier transport. However, crystalline orientation control has been a major issue in Sb2Se3 thin film solar cells. Herein, a new strategy has been developed to tailor the crystal growth of Sb2Se3 ribbons perpendicular to the substrate by using the structural heterostructured CdS buffer layer. The heterostructured CdS buffer layer is formed by a dual layer of CdS nanorods and nanoparticles. The hexagonal CdS nanorods passivated by a thin cubic CdS nanoparticle layer can promote [211] and [221] directional growth of Sb2Se3 ribbons using a close space sublimation approach. The improved buffer/absorber interface, reduced interface defects, and recombination loss contribute to the improved device efficiency of 7.16%. This new structural heterostructured CdS buffer layer can regulate Sb2Se3 nanoribbons crystal growth and pave the way to further improve the low‐dimensional chalcogenide thin film solar cell efficiency.