Inverse heat conduction problem in a phase change memory device

Inverse heat conduction problem in a phase change memory device
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相变存储器件中的逆热传导问题

DOI:
10.1088/1742-6596/785/1/012002
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发表时间:
2017
期刊:
影响因子:
--
通讯作者:
V. Sousa
V. Sousa
中科院分区:
--
文献类型:
--
作者:
J. Battaglia;Indrayush De;V. Sousa

文献摘要

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利用扫描热显微镜对相变存储器件进行了热研究,解决了逆热传导问题。该热传递模型基于对探头热阻抗的系统辨识和对器件热阻抗的有限元方法。然后利用非线性最小二乘算法辨识模型中的未知参数,该算法使测量的探头温度与模拟的探头温度之间的二次差最小。
An invers heat conduction problem is solved considering the thermal investigation of a phase change memory device using the scanning thermal microscopy. The heat transfer model rests on system identification for the probe thermal impedance and on a finite element method for the device thermal impedance. Unknown parameters in the model are then identified using a nonlinear least square algorithm that minimizes the quadratic gap between the measured probe temperature and the simulated one.