Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility
Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility
复制标题
硼氮共掺高压高温大迁移率单晶金刚石的合成与表征
DOI：
10.1088/1674-1056/abf12c
复制
发表时间：
2021
影响因子：
1.7
通讯作者：
Jia Xiao-Peng
中科院分区：
文献类型：
--
作者：
Miao Xin-Yuan;Ma Hong-An;Zhang Zhuang-Fei;Chen Liang-Chao;Zhou Li-Juan;Li Min-Si;Jia Xiao-Peng
在高压高温条件下（5.9 GPa, 1290℃）合成并研究了硼掺杂和硼/氮共掺杂的大单晶金刚石。对合成金刚石的光学、电学性质和表面特征进行了观察和研究。氮的掺入显著改变了含硼金刚石表面的生长痕迹。x射线光电子能谱（XPS）测量表明，氮原子成功地结合到富硼金刚石晶格中，并与碳原子结合。Raman光谱显示了硼掺杂和硼氮共掺杂金刚石在生长表面和内部的差异。傅里叶变换红外光谱（FTIR）测量表明，氮的掺入显著降低了金刚石中硼受体的浓度。室温下霍尔测量结果表明，共掺杂金刚石的载流子浓度降低，迁移率明显提高。样品BNDD-1的最高空穴迁移率达到980 cm 2⋅V−1⋅s−1，并对可能的原因进行了讨论。
We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature (HPHT) conditions (5.9 GPa and 1290 C). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy (XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy (FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm 2⋅ V− 1⋅ s− 1, possible reasons were discussed in the paper.