Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
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DOI：
10.1063/1.4868032
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发表时间：
2014-03
影响因子：
4
通讯作者：
Cimang Lu;C. Lee;Wenfeng Zhang;T. Nishimura;K. Nagashio;A. Toriumi
中科院分区：
文献类型：
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作者：
Cimang Lu;C. Lee;Wenfeng Zhang;T. Nishimura;K. Nagashio;A. Toriumi
本文系统地研究了锗基掺钇氧化锗（Y-GeO_2）的材料和电学性质。与纯GeO 2/Ge叠层相比，Y-GeO 2/Ge叠层的热稳定性和耐水性都有显著提高。结果表明，Y-GeO 2/Ge叠层具有较低的Dit，且Y-GeO 2层的介电常数有所提高，这对进一步缩小Ge栅叠层的等效氧化层厚度是有益的。从吉布斯自由能的降低和网络结构的改性两个方面讨论了Y-GeO_2的热稳定性和耐水性的改善。
We have systematically investigated the material and electrical properties of yttrium-doped GeO2 (Y-GeO2) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO2/Ge stack, compared to that of pure GeO2/Ge stack. The excellent electrical properties of Y-GeO2/Ge stacks with low Dit were presented as well as enhancement of dielectric constant in Y-GeO2 layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO2.