Self-diffusion in intrinsic germanium and effects of doping on self-diffusion in germanium
Self-diffusion in intrinsic germanium and effects of doping on self-diffusion in germanium
复制标题
本征锗的自扩散以及掺杂对锗自扩散的影响
DOI：
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发表时间：
1983
期刊：
影响因子：
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通讯作者：
H. Mehrer
中科院分区：
文献类型：
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作者：
G. Vogel;G. Hettich;H. Mehrer
本文用~（71）Ge作放射性同位素，用连续切片溅射技术，研究了本征锗单晶在822- 1163 K温度范围内的自扩散。数据可以用指前因子（2.48+或-0.6）*10-3 m2 s-1和活化焓（3.14+或-0.92）eV来描述。目前的数据进行了讨论，与文献数据在较高的温度下与传统的切片技术。在870和894 K的自扩散系数也测量了Ga掺杂（1.7 × 1018原子cm-3）和Sb掺杂（1.8 × 1018原子cm-3）的样品。与本征材料相比，扩散率在n型中较高，在p型锗中较低。由于已知锗中的空位充当受主，因此可以根据掺杂晶体中费米能级的偏移来理解所观察到的掺杂依赖性的方向和数量级。这支持了锗中的自扩散通过空位机制进行的观点。
Self-diffusion in intrinsic germanium single crystals has been investigated over the temperature range 822-1163K using 71Ge as radioisotope and a sputtering technique for serial sectioning. The data can be described by a preexponential factor of (2.48+or-0.6)*10-3 m2 s-1 and an activation enthalpy of (3.14+or-0.92) eV. The present data are discussed together with literature data obtained with conventional sectioning techniques at higher temperatures. The self-diffusion coefficients at 870 and 894K were also measured for Ga-doped (1.7*1018 atoms cm-3) and Sb-doped (1.8*1018 atoms cm-3) samples. The diffusivity is higher in n-type and lower in p-type germanium than in intrinsic material. Since it is known that a vacancy in germanium acts as an acceptor the observed direction and order of magnitude of the doping dependence can be understood in terms of the shift of the Fermi level in doped crystals. This supports the view that self-diffusion in germanium proceeds by a vacancy mechanism.