THE INTERACTION OF THIN NIO LAYERS WITH SINGLE-CRYSTALLINE ALPHA-AL2O3(11(2)OVER-BAR0) SUBSTRATES
THE INTERACTION OF THIN NIO LAYERS WITH SINGLE-CRYSTALLINE ALPHA-AL2O3(11(2)OVER-BAR0) SUBSTRATES
复制标题
DOI：
10.1016/0039-6028(95)00063-1
复制
发表时间：
1995-05-20
期刊：
影响因子：
1.9
通讯作者：
HABRAKEN, FHPM
中科院分区：
文献类型：
--
作者：
BOLT, PH;TENGROTENHUIS, E;HABRAKEN, FHPM
为了研究NiO和α-Al 2 O3到NiAl 2 O 4之间在单层水平上的界面反应，将薄Ni层（4-29 × 10（15）原子/cm（2）Ni）气相沉积到Al 2 O3（11（2）在棒0上）衬底上，随后在O-2中在400至1100 ℃的温度范围内退火。随后，通过高能离子通道，X射线光电子能谱和原子力显微镜分析样品。从离子通道分析推断，在高达950 ℃的温度下不会形成块状NiAl 2 O 4。由于NiO的烧结，在O-2中在900 ℃退火后通过AFM观察到相当大的氧化镍颗粒（最大高度约50 nm）。在1000 ℃退火后观察到相当小的颗粒，并且在保持在1100 ℃的样品上几乎没有发现颗粒。这些发现与XPS结果一致。在1000摄氏度和更高的温度下，固态反应生成NiAl 2 O 4的速率显然与NiO岛形成的速率相当或更高。此外，一些Ni-Al-O前体化合物的形成在界面低于NiAl 2 O 4的反应的起始温度的迹象进行了讨论。
In order to investigate the interfacial reaction between NiO and alpha-Al2O3 to NiAl2O4 at monolayer level, thin Ni layers (4-29 x 10(15) atoms/cm(2) Ni) were vapour-deposited onto Al2O3(11 (2) over bar 0) substrates and subsequently annealed in O-2 at temperatures ranging from 400 to 1100 degrees C. The samples were subsequently analyzed by high energy ion channeling, X-ray photoelectron spectroscopy and atomic force microscopy. From ion channeling analysis it is deduced that formation of bulk NiAl2O4 does not occur at temperatures up to 950 degrees C. Due to sintering of NiO quite large nickel oxide particles (maximum height about 50 nm) were observed by AFM after annealing at 900 degrees C in O-2. Considerably smaller particles were observed after annealing at 1000 degrees C, and almost no particles were found on the sample kept at 1100 degrees C. These findings are consistent with the XPS results. At 1000 degrees C and higher temperatures, the rate of the solid state reaction to NiAl2O4 is apparently comparable to or higher than the rate of NiO-island formation. Furthermore, several indications for the formation of some Ni-Al-O precursor compound at the interface below the onset temperature of the reaction to NiAl2O4 are discussed.