Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
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DOI：
10.1063/1.4770059
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发表时间：
2012-12-03
影响因子：
4
通讯作者：
Koide, Yasuo
中科院分区：
文献类型：
--
作者：
Cheng, Shaoheng;Sang, Liwen;Koide, Yasuo
报道了在p型金刚石单晶上直接沉积高介电常数（高k）Ta 2 O 5薄膜的方法。采用化学气相沉积法在金刚石表面沉积非晶Ta_2 O_5薄膜，通过退火处理在金刚石表面获得了六方晶相的Ta_2 O_5薄膜。通过制作金属-绝缘体-半导体（MIS）二极管，研究了Ta 2 O 5薄膜的电学特性。MIS二极管的漏电流对于所沉积的非晶Ta_2 O_5膜低至10（-8）A/cm（2），对于晶化膜低至10（-2）A/cm（2），在-3V的正向偏压下分别比肖特基二极管低10（8）和10（2）倍。非晶Ta 2 O 5薄膜的介电常数为16，在800 ℃退火后增加到29。提出了非晶和晶化Ta 2 O 5薄膜不同的漏电流机制和电荷俘获行为。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4770059]
The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films on p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase delta-Ta2O5 film is achieved on diamond by annealing the amorphous Ta2O5 film deposited by a sputter-deposition technique. The electrical properties of the Ta2O5 thin films are investigated by fabricating metal-insulator-semiconductor (MIS) diodes. The leakage current of the MIS diode is as low as 10(-8) A/cm(2) for the as-deposited amorphous Ta2O5 film and 10(-2) A/cm(2) for the crystallized film, which is 10(8) and 10(2) times lower than that of the Schottky diode at a forward bias of -3V, respectively. The dielectric constant of the amorphous Ta2O5 films is measured to be 16 and increases to 29 after annealing at 800 degrees C. Different current leakage mechanisms and charge trapping behaviors are proposed for the amorphous and crystallized Ta2O5 thin films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770059]