Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation
Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation
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使用同步加速器辐射在紫外和真空紫外 (VUV) 区域表征 GaN 基肖特基势垒紫外 (UV) 探测器
DOI：
10.1143/jjap.40.l368
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Fukui
中科院分区：
文献类型：
--
作者：
A. Motogaito;M. Yamaguchi;K. Hiramatsu;M. Kotoh;Y. Ohuchi;K. Tadatomo;Y. Hamamura;K. Fukui
报道了用同步辐射（hν=2.2-30 eV，λ=41-563 nm）对梳状电极GaN基肖特基势垒紫外探测器的特性研究。在hν=8.0 eV（λ>155 nm）以下，探测器不需要GaN和Au电极的任何光电发射。在施加反向偏压时，响应度在-0.4V时提高到0.05A/W，光电流受反向偏压控制。当hν=8.0 eV（λ<155 nm）时，响应谱主要由Au和GaN的光电发射决定。这些结果表明，这些肖特基型梅萨结构探测器是有效的真空紫外（VUV）-紫外光（155
Characterization of GaN-based Schottky barrier ultraviolet (UV) detectors with a comb-shaped electrode using synchrotron radiation (hν=2.2–30 eV, λ=41–563 nm) is described. Below hν=8.0 eV (λ>155 nm), the detectors are available without any photoemission of GaN and Au electrode. Under application of reverse bias, the responsivity is increased to 0.05 A/W at -0.4 V. The photocurrent is controlled by reverse bias. On the other hand, above hν=8.0 eV (λ<155 nm), the responsivity spectra are dominated by photoemissions of Au and GaN. These results show that these Schottky type detectors with mesa structures are effective to detect vacuum ultraviolet (VUV)-UV light (155