Electromigration drift velocity in Cu interconnects modeled with the level set method
Electromigration drift velocity in Cu interconnects modeled with the level set method
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DOI：
10.1063/1.1327274
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发表时间：
2000-11
影响因子：
4
通讯作者：
M. Nathan;E. Glickman;M. Khenner;A. Averbuch;M. Israeli
中科院分区：
文献类型：
--
作者：
M. Nathan;E. Glickman;M. Khenner;A. Averbuch;M. Israeli
电迁移~EM！漂移速度~dv！用Level Set方法对多晶纯铜线的实验进行了数值模拟。这个模拟是基于晶界的~GB！凹槽模型，包含电场。该模型的区别在于两个表面和一个边界层相交的三点处的两个关键要求：边界层和表面通量耦合~通量连续性！以及表面张力和边界层张力之间的永久平衡。表面扩散只存在于推进的阴极边缘，由局部曲率梯度和局部场共同驱动。使用独立的文献扩散系数值，模拟得到Arrhenius类型表达式中的DV前因子和EM激活能。在573-723K的温度范围内，实验dv值与实验值符合得很好，并讨论了材料输运机制的一些问题。©2000美国物理研究所。@S0003-6951~00 01647-8#
Electromigration ~EM! drift velocity ~DV! experiments in polycrystalline pure Cu lines are simulated numerically with the level set method. The simulation is based on a grain boundary ~GB! grooving model, incorporating an electric field. The model is distinguished by two key requirements imposed at the triple point where two surfaces and a GB meet: that of GB and surface flux coupling ~flux continuity !, and that of permanent equilibrium between surface and GB tensions. Surface diffusion exists only at the advancing cathode edge, and is driven both by local curvature gradients and by the local field. Using independent, literature diffusivity values, the simulation yields both the DV prefactor and the EM activation energy in an Arrhenius-type expression. An excellent match is obtained with experimental DV values in the T range of 573‐723 K. Some implications regarding the material transport mechanism are discussed. © 2000 American Institute of Physics. @S0003-6951~00!01647-8#