Electronic transport in two-dimensional graphene
Electronic transport in two-dimensional graphene
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DOI：
10.1103/revmodphys.83.407
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发表时间：
2011-05-16
影响因子：
44.1
通讯作者：
Rossi, Enrico
中科院分区：
文献类型：
--
作者：
Das Sarma, S.;Adam, Shaffique;Rossi, Enrico
对二维石墨烯的基本电子性质进行了广泛的综述，重点介绍了石墨烯掺杂结构或门控结构中的密度和温度相关的载流子输运。这篇综述的一个突出特点是对石墨烯和二维半导体系统(如异质结构、量子阱、反型层)中的载流子输运进行了关键的比较，从而突出了石墨烯的无间隙、无质量、手性Dirac光谱所产生的电子性质的独特特征。实验和理论，以及量子和半经典输运，以协同的方式讨论，以提供一个统一的和全面的观点。虽然综述的重点是石墨烯传输的那些方面，在文献中存在合理的共识，但也讨论了开放的问题。深入描述了控制输运的各种物理机制，包括长程带电杂质散射、屏蔽、短程缺陷散射、声子散射、多体效应、Klein隧穿、Dirac点的最小电导率、电子-空穴坑的形成、p-n结、局域化、渗流、量子-经典交叉、中间能带态、量子霍尔效应等现象。
A broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature-dependent carrier transport in doped or gated graphene structures is provided. A salient feature of this review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e. g., heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gapless, massless, chiral Dirac spectrum are highlighted. Experiment and theory, as well as quantum and semiclassical transport, are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long-range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.