Amorphous Silicon Carbide Chemical Vapor Deposition on Metal Surface Using Monomethylsilane Gas at Low Temperatures
Amorphous Silicon Carbide Chemical Vapor Deposition on Metal Surface Using Monomethylsilane Gas at Low Temperatures
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低温下使用甲基硅烷气体在金属表面化学气相沉积非晶碳化硅
DOI：
10.1016/j.surfcoat.2012.11.078
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Hitoshi Habuka and Masaki Tsuji
中科院分区：
文献类型：
--
作者：
A.N.Itakura;Shoji Takagi;Shinji Suzuki;Tetsuji Gotoh;Yoshiharu Murase;Masahiro Tosa;Hitoshi Habuka and Masaki Tsuji
使用单甲基硅烷气体开发了在金属表面（例如铝和不锈钢）上沉积碳化硅的低温化学气相沉积工艺。为了制备反应性基底表面，分别使用两种替代方法。第一个是形成含有硅二聚体的硅夹层。另一种方法是氩等离子体刻蚀产生悬挂键。在反应性表面制备之后，使用单甲基硅烷气体在室温下形成碳化硅薄膜。由于沉积后硅碳键仍然存在，碳化硅涂层技术有望适用于各种金属。
The low temperature chemical vapor deposition process of depositing silicon carbide on a metal surface, such as aluminum and stainless steel, was developed using monomethylsilane gas. In order to prepare the reactive substrate surface, two alternative methods were separately used. The first was the formation of a silicon interlayer containing silicon dimers. The other method was the argon plasma etching for producing dangling bonds. After the reactive surface preparation, the silicon carbide thin film was formed at room temperature using monomethylsilane gas. Because the silicon–carbon bond remained after the deposition, the silicon carbide coating technology is expected to be applicable for various metals.