Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers
Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers
复制标题
4H-SiC 外延片中梯形缺陷和钝角三角形缺陷的栅氧化层可靠性
DOI：
10.7567/jjap.53.04ep15
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发表时间：
2014
影响因子：
1.5
通讯作者：
H. Matsuhata
中科院分区：
文献类型：
--
作者：
O. Ishiyama;Keiichi Yamada;H. Sako;K. Tamura;M. Kitabatake;J. Senzaki;H. Matsuhata
讨论了栅氧化层对4H-SiC外延片中大面积表面缺陷(梯形缺陷和钝化三角形缺陷)的可靠性。与时间相关的介电击穿测量表明，在包括这些缺陷的下游线的MOS电容器处发生了电荷击穿(QBD)的减少。梯形缺陷和钝性三角形缺陷的QBD恶化程度相同。透射电子显微镜的横截面图像和对MOS结构电场分布的模拟表明，氧化层厚度的局部波动和/或下游线路上界面的粗糙度导致了MOS电容器的可靠性下降。
The reliability of the gate oxide on large-area surface defects (trapezoid-shaped and obtuse triangular defects) in 4H-SiC epitaxial wafers is discussed. Time-dependent dielectric breakdown measurements revealed that a reduction in charge-to-breakdown (Qbd) occurred at a MOS capacitor including the downstream line of those defects. The deterioration of Qbd was at the same level in trapezoid-shaped defects and obtuse triangular defects. A cross-sectional transmission electron microscope (TEM) image and the simulation of the electric field distribution for the MOS structure indicated that the local fluctuation of the oxide thickness and/or the roughness of the interface on the downstream lines caused the degradation of the reliability of the MOS capacitors.