The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
The Effect of Slurry Composition and Flatness on Sub-Surface Damage and Removal in Chemical Mechanical Polishing of 6H-SiC
复制标题
DOI：
10.4028/www.scientific.net/msf.615-617.605
复制
发表时间：
2009-03
期刊：
影响因子：
--
通讯作者：
G. Lee;Hyun-Hee Hwang;C. Son;J. Choi;Won Jae Lee;B. Shin;J. Seo;K. Ku;Haedo Jeong
中科院分区：
文献类型：
--
作者：
G. Lee;Hyun-Hee Hwang;C. Son;J. Choi;Won Jae Lee;B. Shin;J. Seo;K. Ku;Haedo Jeong
系统地研究了浆料组成和晶片平坦度对材料去除率（MRR）和所得表面粗糙度的影响，所述材料去除率和所得表面粗糙度是用于确定轴上6 H-SiC衬底的CMP特性的评价参数。10 × 10 mm 2的6 H-SiC衬底和2英寸的SiC晶片制造的锭生长通过传统的物理气相传输（PVT）方法用于这项研究。在KOH基胶态二氧化硅和纳米金刚石颗粒组成的抛光液中加入氧化剂，经过CMP处理后的SiC衬底显示出显著的MRR值和良好的表面质量，没有任何表面损伤。与具有低弯曲值的晶片相比，在CMP工艺之后具有高弯曲值的SiC晶片表现出表面粗糙度值的大的变化。观察到具有10 μ m的低弯曲值的CMP处理的SiC晶片导致0.15 μ m/h的MRR值和0.772 μ m的平均高度（Ra）值。
The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 10 x 10 mm2 6H-SiC substrates and 2-inch SiC wafers fabricated from the ingot grown by a conventional physical vapor transport (PVT) method are used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers having high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMP-processed SiC wafer having a low bow value of 10m was observed to result in the MRR value of 0.15 m/h and the mean height (Ra) value of 0.772Ǻ.