Thermoelectric properties of Sn-doped Bi–Sb
Thermoelectric properties of Sn-doped Bi–Sb
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DOI：
10.1016/j.jallcom.2008.12.071
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发表时间：
2009-06
影响因子：
6.2
通讯作者：
Y. Hor;R. Cava
中科院分区：
文献类型：
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作者：
Y. Hor;R. Cava
在10 ~ 300K的温度范围内，用5%或更低水平的sn掺杂制备的p型Bi-Sb合金的塞贝克系数、电阻率和总热导率均得到了报告。在Bi-Sb合金固溶体半导体区7-10% Sb和18-20% Sb两个极端，研究了合金的Sb含量。所有合金的行为相对相似，发现最好的p型材料Bi0.885Sb0.075Sn0.04在200K时的最大热电性能值为ZT=0.08。当温度为200K时，该合金体系中最优n-p偶的热电效率在ZT=0.13处达到峰值。
The Seebeck coefficients, electrical resistivities, and total thermal conductivities are reported for temperatures between 10 and 300K for p-type Bi–Sb alloys made by Sn-doping at the 5% level or below. Alloys are investigated for Sb contents at both extremes of the semiconducting region of the Bi–Sb alloy solid solution, 7–10% Sb and 18–20% Sb. The behavior of all the alloys is relatively similar, and the best p-type material found, Bi0.885Sb0.075Sn0.04, has a maximum thermoelectric figure of merit of ZT=0.08 at 200K. The thermoelectric efficiency of the optimal n–p couple in this alloy system peaks at ZT=0.13 at a temperature of 200K.