Impact of negative and positive bias temperature stress on 6T-SRAM cells
Impact of negative and positive bias temperature stress on 6T-SRAM cells
复制标题
负偏压和正偏压温度应力对 6T-SRAM 单元的影响
DOI：
10.5194/ars-7-191-2009
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发表时间：
2009
影响因子：
0.4
通讯作者：
D. Schmitt
中科院分区：
文献类型：
--
作者：
S. Drapatz;G. Georgakos;D. Schmitt
抽象的。随着高k栅氧化物材料的引入，正偏置温度不稳定性（PBTI）的退化效应开始发挥重要作用。再加上仍然有效的负偏置温度不稳定性（NBTI），它对6 T SRAM存储单元有显着影响。我们提出了这两种效果的模拟，首先隔离，然后结合在SRAM操作。在一个数据的长期保持期间，两个效应相加为最差情况影响。这导致非对称单元，其在紧接着的读取周期中，结合通常不可避免的生产变化，最大化破坏性阅读的风险。在未来的SRAM设计中，考虑这种效应的组合以避免不期望的写入事件将是重要的。
Abstract. With introduction of high-k gate oxide materials, the degradation effect Positive Bias Temperature Instability (PBTI) is starting to play an important role. Together with the still effective Negative Bias Temperature Instability (NBTI) it has significant influence on the 6T SRAM memory cell. We present simulations of both effects, first isolated, then combined in SRAM operation. During long hold of one data, both effects add up to a worst case impact. This leads to an asymmetric cell, which, in a directly following read cycle, combined with the generally unavoidable production variations, maximizes the risk of destructive reading. In future SRAM designs, it will be important to consider this combination of effects to avoid an undesired write event.