Temperature effects for vibrational relaxation of hydrogen adsorbed on Si(100): a stochastic multiconfigurational time-dependent Hartree (MCTDH) study
Temperature effects for vibrational relaxation of hydrogen adsorbed on Si(100): a stochastic multiconfigurational time-dependent Hartree (MCTDH) study
复制标题
Si(100) 上吸附的氢振动弛豫的温度效应:随机多构型时间相关 Hartree (MCTDH) 研究
DOI:
10.1007/s00214-009-0721-y
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发表时间:
2010
影响因子:
1.7
通讯作者:
P. Saalfrank
中科院分区:
文献类型:
--
作者:
F. Lüder;M. Nest;P. Saalfrank
Using a previously developed system–bath model Hamiltonian for the vibrational relaxation of H atoms adsorbed on a Si(100) surface (Andrianov and Saalfrank in J Chem Phys 124:034710, 2006), temperature effects on the relaxation of excited adsorbate vibrations are studied non-perturbatively. In particular, the Si–Si–H bending mode, for which relaxation times in the order of picoseconds have been predicted theoretically, is considered. Also, the excitation by infrared laser pulses is explicitly modelled. To do so, a combined system–bath Schrödinger equation is considered, in which an anharmonic system describing the vibrating H atom is coupled non-linearly to a set of harmonic oscillators which represent the phonon bath of the solid. For the time evolution, the multiconfigurational time-dependent Hartree (MCTDH) method is used together with a stochastic approach to sample thermal initial conditions. In contrast to perturbative approaches (Golden Rule), it is found that the bending mode relaxes the slower, the hotter the surface is. Possible reasons for this “puzzle”, which also seems at variance with measurements for H:Si(100), are discussed.