PRECISE DETERMINATION OF DEEP TRAP SIGNATURES AND THEIR RELATIVE AND ABSOLUTE CONCENTRATIONS IN SEMI-INSULATING GAAS
PRECISE DETERMINATION OF DEEP TRAP SIGNATURES AND THEIR RELATIVE AND ABSOLUTE CONCENTRATIONS IN SEMI-INSULATING GAAS
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DOI：
10.1063/1.368258
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发表时间：
1998-09
影响因子：
3.2
通讯作者：
M. Pavlović;U. Desnica
中科院分区：
文献类型：
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作者：
M. Pavlović;U. Desnica
提出了新的分析方法，同时多峰分析（SIMPA），其中包括同时拟合整个测量的热刺激电流（TSC）光谱。该程序清楚地解决了各种重叠 TSC 峰的贡献，从而精确确定每个陷阱的陷阱参数（签名）。结合光电流温度依赖性测量 IPC(T)（反映自由载流子寿命温度依赖性），还对相对和绝对陷阱浓度进行了估计。论证并分析了 SIMPA 方法与单峰方法相比的优势。 SIMPA方法适用于不同的半绝缘（SI）GaAs样品，特别是深陷阱浓度非常高的样品和深陷阱浓度非常低的样品；对于这两个极端，都实现了出色的配合。该方法对于深能级和其他类似 SI 材料（如 SI InP 或 SI）的表征似乎也非常有前景。
The new analytical method, simultaneous multiple peak analysis (SIMPA) which comprises simultaneous fitting of whole measured thermally stimulated current (TSC) spectra is presented. The procedure clearly resolves contributions from various overlapping TSC peaks, which results in precise determination of trap parameters (signature) for each trap. In combination with photocurrent temperature dependent measurements, IPC(T), which reflects free carrier lifetime temperature dependence, the estimates of relative and absolute trap concentrations were made as well. The advantage of the SIMPA method in comparison with the single peak approach was demonstrated and analyzed. The SIMPA method was applied to different semi-insulating (SI) GaAs samples, particularly to samples having very high and others having very low deep trap concentrations; and for both extremes excellent fits were achieved. The method also seems very promising for characterization of deep levels and other similar SI materials, like SI InP or SI ...