Increased electrical conduction with high hole mobility in anti-ThCr2Si2-type La2O2Bi via oxygen intercalation adjacent to Bi square net
Increased electrical conduction with high hole mobility in anti-ThCr2Si2-type La2O2Bi via oxygen intercalation adjacent to Bi square net
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DOI:
10.1063/5.0005300
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发表时间:
2020-05-11
影响因子:
4
通讯作者:
Fukumura, Tomoteru
中科院分区:
文献类型:
--
作者:
Matsumoto, Kota;Kawasoko, Hideyuki;Fukumura, Tomoteru
Anti-ThCr2Si2-type RE2O2Bi (RE = rare earth) with a Bi square net is known to show an insulator-metal transition by substituting RE. In this study, La2O2Bi polycrystals with different oxygen nonstoichiometry were synthesized. As the amount of oxygen in La2O2Bi increased, the c-axis length was expanded due to the generation of an additional 4e site for excess oxygen, while the a-axis length remained almost constant, indicating the separation of Bi square nets by oxygen intercalation. Concomitantly, transformation of insulating La2O2Bi into metallic La2O2Bi occurred with the change in carrier polarity from the n- to p-type. Despite its polycrystalline form, La2O2Bi with the largest amount of oxygen showed a rather high hole mobility of 85 cm(2) V-1 s(-1) among other layered oxypnictides and oxychalcogenides.