Modeling of threading dislocation reduction in growing GaN layers
Modeling of threading dislocation reduction in growing GaN layers
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DOI：
10.1016/s0022-0248(01)01468-3
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发表时间：
2001-10-01
影响因子：
1.8
通讯作者：
Speck, JS
中科院分区：
文献类型：
--
作者：
Mathis, SK;Romanov, AE;Speck, JS
在这个工作。建立了（0 0 0 1）纤锌矿外延GaN薄膜中穿透位错（TD）减少的模型。该模型是基于一种方法，最初提出的（0 0 1）FCC薄膜生长，并使用相互TD运动和反应的概念。我们表明，实验观察到的缓慢TD减少GaN可以解释由于TD线方向几乎垂直于膜表面的TD反应概率低。螺旋位错在III族氮化物薄膜的行为被认为是强烈影响TD减少。氢化物气相外延（HVPE）生长GaN的位错减少数据很好地描述了这个模型。该模型提供了一个非饱和的TD密度在厚GaN膜的解释。(C)2001 Elsevier Science B.V.保留所有权利。
In this work. a model is developed to treat threading dislocation (TD) reduction in (0 0 0 1) wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for (0 0 1) FCC thin film growth and uses the concepts of mutual TD motion and reactions. We show that the experimentally observed slow TD reduction in GaN can be explained by low TD reaction probabilities due to TD line directions practically normal to the film surface. The behavior of screw dislocations in III-nitride films is considered and is found to strongly impact TD reduction. Dislocation reduction data in hydride vapor phase epitaxy (HVPE) grown GaN are well described by this model. The model provides an explanation for the non-saturating TD density in thick GaN films. (C) 2001 Elsevier Science B.V. All rights reserved.