Total Ionizing Dose Effects in Piezoelectric MEMS Relays
Total Ionizing Dose Effects in Piezoelectric MEMS Relays
复制标题
压电 MEMS 继电器中的总电离剂量效应
DOI：
10.1109/tns.2013.2282261
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发表时间：
2013
影响因子：
1.8
通讯作者：
N. Roche
中科院分区：
文献类型：
--
作者：
R. Proie;R. Polcawich;C. Cress;L. Sanchez;Alden Grobicki;J. Pulskamp;N. Roche
研究了总电离剂量（TID）对锆钛酸铅（PZT）压电性能的影响。的电容和接触电压的薄膜，PZT为基础的继电器进行测量后，增量60钴TID照射。在暴露期间，将器械保持在几种不同的偏压条件下。在曝光期间的偏置电场的方向，沿着曝光前的极化，对继电器的辐照后工作电压具有可测量的影响。在所有情况下，如经由电容对电压扫描中的峰值获得的切换电压在将最小化曝光前极化方向上的切换电场的方向上移位。观察到这些效应均显著大于一组对照样品所经历的变化，并且通过在室温下老化可逆。该设备显示出显著的鲁棒性，在主动TID暴露[剂量率= 855.6 rad（Si）/s]期间运行，在TID大于15 Mrad（Si）时失效。
This paper investigates total ionizing dose (TID) effects on the piezoelectric properties of lead zirconate titanate (PZT). The capacitance and contact voltage of thin-film, PZT-based relays were measured following incremental 60Co TID irradiations. The devices were held in several different bias conditions, during exposure. The direction of the biasing electric field during exposure, along with the polarization prior to exposure, has a measurable impact on post-irradiation operating voltage of the relay. In all cases, the switching voltage, as obtained via the peak values in a capacitance versus voltage sweep, shifted in a direction that would minimize the switching electric field in the direction of pre-exposure polarization. These effects were observed to be both significantly greater than the shifts experienced by a set of control samples, as well as reversible via aging at room temperature. The devices display remarkable robustness, operating during active TID exposure [dose rate = 855.6 rad(Si)/s], failing at a TID greater than 15 Mrad(Si).