Bias dependence of electron spin polarization in GaNAs quantum well-InAs quantum dot tunnel-coupled structures
Bias dependence of electron spin polarization in GaNAs quantum well-InAs quantum dot tunnel-coupled structures
复制标题
GaNs 量子阱-InAs 量子点隧道耦合结构中电子自旋极化的偏置依赖性
DOI:
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发表时间:
2022
期刊:
影响因子:
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通讯作者:
Akihiro Murayama
中科院分区:
文献类型:
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作者:
Hiroto Kise;Soyoung Park;Satoshi Hiura;Junichi Takayama;Kazuhisa Sueoka;Akihiro Murayama