Formation of ultra-fine grained materials by machining and the characteristics of the deformation fields
Formation of ultra-fine grained materials by machining and the characteristics of the deformation fields
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超细晶材料的机械加工形成及其变形场特征
DOI：
10.1016/j.jmatprotec.2008.10.043
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发表时间：
2009-05
影响因子：
6.3
通讯作者：
Tang, Y.
中科院分区：
文献类型：
--
作者：
Li, C.;Xia, W.;Deng, W. J.;Tang, Y.
通过平面应变加工研究了几种材料通过剧烈塑性变形形成超细结构。加工芯片中产生的微观结构通过光学显微镜和透射电子显微镜表征为超细晶粒。采用理论模型评估主变形区的大塑性变形，结果表明，剪切面产生的典型剪应变在2~10范围内。开发了一个更真实的有限元模型来表征平面正交加工中与切屑形成相关的变形场。数值结果表明，与超细晶粒切屑形成相关的大部分晶粒细化可归因于变形区施加的大剪切应变。将机械加工作为一种制备超细晶材料的方法和研究剧烈塑性变形的一种实验方法是可行的。
Formation of ultra-fine structure in several materials by severe plastic deformation has been studied by plane strain machining. The microstructure generated in machined chips was characterized by optical microscopy and transmission electron microscopy as ultra-fine grains. A theoretical model was adopted to evaluate large plastic deformation in the primary deformation zone, the results show that the typical shear strains generated at the shear plane are in the range of 2–10. A more realistic finite element model was developed to characterize the deformation field associated with chip formation in plain orthogonal machining. The numerical results show that most of the grain refinement associated with the formation of ultra-fine grained chip can be attributed to the large shear strain imposed in the deformation zone. It could be feasible to take machining as a method to preparing ultra-fine grained materials and a type of experiment method to study severe plastic deformation.
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影响因子：
2.7
作者：
Travis L. Brown;S. Swaminathan;S. Chandrasekar;W. Compton;A. King;K. Trumble
通讯作者：
Travis L. Brown;S. Swaminathan;S. Chandrasekar;W. Compton;A. King;K. Trumble
影响因子：
2.7
作者：
W. Moscoso;M. Shankar;J. Mann;W. Compton;S. Chandrasekar
通讯作者：
W. Moscoso;M. Shankar;J. Mann;W. Compton;S. Chandrasekar
DOI：
--
发表时间：
2005
期刊：
--
影响因子：
--
作者：
邓文君;夏伟;李元元;邵明;张卫文
通讯作者：
邓文君;夏伟;李元元;邵明;张卫文
DOI：
10.1557/proc-821-p9.5
发表时间：
2004
期刊：
MRS Proceedings
影响因子：
--
作者：
S. Swaminathan;C. Swanson;Travis L. Brown;R. Kezar;S. Chandrasekar;W. Compton;K. Trumble
通讯作者：
S. Swaminathan;C. Swanson;Travis L. Brown;R. Kezar;S. Chandrasekar;W. Compton;K. Trumble
DOI：
10.1016/j.msea.2005.08.137
发表时间：
2005-11
影响因子：
6.4
作者：
M.Ravi Shankar;S. Chandrasekar;W.Dale Compton;Alexander H. King
通讯作者：
M.Ravi Shankar;S. Chandrasekar;W.Dale Compton;Alexander H. King