Deionization of dopants in silicon nanofilms even with donor concentration of greater than 1E19 cm-3
Deionization of dopants in silicon nanofilms even with donor concentration of greater than 1E19 cm-3
复制标题
即使施主浓度大于 1E19 cm-3，硅纳米膜中的掺杂剂也会去离子
DOI：
10.1021/acs.nanolett.5b04406
复制
发表时间：
2016
期刊：
影响因子：
10.8
通讯作者：
and K. Uchida
中科院分区：
文献类型：
--
作者：
T. Tanaka;Y. Kurosawa;N. Kadotani;T. Takahashi;S. Oda;and K. Uchida
了解重掺杂纳米级半导体中的掺杂剂特性对于设计纳米级器件至关重要。我们报告了掺杂剂浓度 (ND) 大于 1019cm-3 的硅 (Si) 纳米薄膜中掺杂剂的去离子或有限电离能，这与相同 ND 下块体硅中的零电离能 (ED) 形成对比。通过实验观察和理论计算的ED的比较，我们将去离子归因于高掺杂纳米级半导体中金属-绝缘体转变的抑制，以及量子限制和介电失配，这大大增加了低掺杂纳米级半导体的ED。因此，对于纳米级晶体管，ND 应高于根据体硅掺杂剂特性估计的值，以便通过金属-绝缘体转变降低其电阻率。
Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019cm–3, which is in contrast to the zero ionization energy (ED) in bulk Si at the sameND. From the comparison of experimentally observed and theoretically calculatedED, we attribute the deionization to the suppression of metal–insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increaseEDin low-doped nanoscale semiconductors. Thus, for nanoscale transistors,NDshould be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal–insulator transition.