Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique
Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique
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DOI：
10.1116/1.3002388
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发表时间：
2009-03
影响因子：
1.4
通讯作者：
T. Mori;Shunsuke Sato;K. Omura;Shota Yajima;Yasuhiro Tsuruoka;Y. Achiba;K. Ishibashi
中科院分区：
文献类型：
--
作者：
T. Mori;Shunsuke Sato;K. Omura;Shota Yajima;Yasuhiro Tsuruoka;Y. Achiba;K. Ishibashi
利用低能Ar离子辐照技术，在单个单壁碳纳米管上制备了单电子晶体管(SET)。用电子束曝光法制作了宽度为50 nm的双开窗保护抗蚀剂，对单个单壁碳纳米管进行了部分辐照。辐照后的节段具有较高的电阻，起到了阻挡作用。SWCNT-SET成功运行到100K。
The single electron transistor (SET) fabrication process on the individual single-walled carbon nanotubes (SWCNTs) using low energy Ar ion irradiation technique has been demonstrated. The individual SWCNT was partly irradiated through the protection resist with the two opening windows, whose width was 50 nm, fabricated by electron beam lithography. The irradiated segments had higher resistance and worked as barriers. The SWCNT-SET successfully operated up to 100 K.