Metal–semiconductor transition like behavior of naphthalene-doped single wall carbon nanotube bundles
Metal–semiconductor transition like behavior of naphthalene-doped single wall carbon nanotube bundles
复制标题
萘掺杂单壁碳纳米管束的金属-半导体转变行为
DOI：
10.1039/c4fd00119b
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and K. Kaneko
中科院分区：
文献类型：
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作者：
F. Khoerunnisa;A. Morelos-Gomez;H. Tanaka;T. Fujimori;D. Minami;R. Kukobat;T. Hayashi;S. Y. Hong;Y. C. Choi;M. Miyahara;M. Terrones;M. Endo;and K. Kaneko
在较宽的温度范围内，由于电荷转移相互作用，萘(N)或萘衍生物(ND)吸附处理明显改变了单壁碳纳米管束的电导率。用二硝基萘分子吸附处理单壁碳纳米管，使单壁碳纳米管束的电导率提高了50倍。具有超晶格结构的单壁碳纳米管束的电导率与温度的关系表明，在260K附近发生了类似于金属-半导体转变的行为。吸附单壁碳纳米管的单壁碳纳米管的电导率对T-−图的对数出现了极大值，这可能发生在转变为金属状态之后，并且与单壁碳纳米管束的部分解体有关，这是由于随着温度的升高，ND的部分振动引起了单壁碳纳米管束的解体。
Naphthalene (N) or naphthalene-derivative (ND) adsorption-treatment evidently varies the electrical conductivity of single wall carbon nanotube (SWCNT) bundles over a wide temperature range due to a charge–transfer interaction. The adsorption treatment of SWCNTs with dinitronaphthalene molecules enhances the electrical conductivity of the SWCNT bundles by 50 times. The temperature dependence of the electrical conductivity of N- or ND-adsorbed SWCNT bundles having a superlattice structure suggests metal–semiconductor transition like behavior near 260 K. The ND-adsorbed SWCNT gives a maximum in the logarithm of electrical conductivity vs. T−1 plot, which may occur after the change to a metallic state and be associated with a partial unravelling of the SWCNT bundle due to an evoked librational motion of the moieties of ND with elevation of the temperature.