Adsorption of atomic oxygen on the Si(110)5×1 surface via interaction with N2O
Adsorption of atomic oxygen on the Si(110)5×1 surface via interaction with N2O
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通过与 N2O 相互作用，原子氧在 Si(110)5×1 表面上的吸附
DOI：
10.1116/1.574176
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
L. Wolterbeek
中科院分区：
文献类型：
--
作者：
E. Keim;A. Silfhout;L. Wolterbeek
本文描述了干净的 Si(110) 表面在超高压下 300 K 下与 N2O 的相互作用，显示出突出的 5×1 超结构。光子能量范围 1.5-4.5 eV 的差示反射计、俄歇电子能谱和低能电子衍射已被用来监测这种固气反应。原子氧（N2O分解释放出来的）在初始吸附阶段通过固定前体态发生化学吸附，其中N2O分子在表面弱结合。反应的每个阶段都涉及氧附着到悬空键上，初始粘附概率为（6.0±0.1）×10-6。该反应在0.42±0.06 ML氧覆盖率处终止，从而留下部分悬空键未反应。这种现象可以从 Si(110) 表面悬空键的性质可以解释：这些杂化物指向非法线方向，从而在较高的氧覆盖率下形成了阻止 N2O 分子有效分解的屏障。额外暴露于 O2 会导致覆盖率达到 0.71±0.11 ML 的钝化氧吸附层。光谱表明 Si(110)5×1 表面可能具有多种类型的（悬空键）表面态。
This paper describes the interaction of a clean Si(110) surface, showing a prominent 5×1 superstructure, with N2O at 300 K in UHV. Differential reflectometry in the photon energy range 1.5-4.5 eV, Auger electron spectroscopy, and low-energy electron diffraction have been used to monitor this solid-gas reaction. Chemisorption of atomic oxygen (as released by decomposition of N2O occurs via an immobile precursor state in the initial adsorption stage in which the N2O molecule is weakly bound at the surface. Every stage of the reaction involves oxygen attachment to the dangling bonds, the initial sticking probability being (6.0±0.1)×10-6. This reaction terminates at 0.42±0.06 ML oxygen coverage, thereby leaving part of the dangling bonds unreacted. This phenomenon can be explained from the nature of the dangling bonds at the Si(110) surface: these hybrids point in off-normal directions thus creating a barrier against effective decomposition of the N2O molecule at higher oxygen coverages. Additional exposure to O2 results in a passivating oxygen adlayer at 0.71±0.11 ML coverage. The optical spectrum indicates that the Si(110)5×1 surface probably has several types of (dangling bond) surface states