Realization of exchange bias control with manipulation of interfacial frustration in magnetic complex oxide heterostructures
Realization of exchange bias control with manipulation of interfacial frustration in magnetic complex oxide heterostructures
复制标题
通过控制磁性复合氧化物异质结构中的界面挫败实现交换偏压控制
DOI：
10.1103/physrevb.104.174444
复制
发表时间：
2021
影响因子：
3.7
通讯作者：
Sean Li
中科院分区：
文献类型：
--
作者：
Ji Zhang;Jack Yang;Grace L Causer;Junjie Shi;Frank Klose;Jing-Kai Huang;Allen Tseng;Danyang Wang;Xiaotao Zu;Liang Qiao;Anh Pham;Sean Li
当铁磁（FM）材料接触自旋玻璃时，观察到丰富的交换偏置（EB）行为，证明了玻璃与FM自旋之间耦合的磁性自由度。然而，磁自旋受挫程度与所产生的电子束强度之间的相关性还远未被理解。本文系统地研究了La0.7Ca0.3MnO3/CaMnO3 （LCMO/CMO）磁性复合氧化物异质结构中EB对界面自旋受挫的影响。实验分析表明，界面自旋受挫的程度是由与界面玻璃自旋行为相关的不同类型磁序之间的微妙竞争决定的。这种自旋受挫可以通过应变工程来控制，通过改变Mn eg轨道来改变异质结构的堆叠顺序。在高、弱受挫异质结构之间实现了95%强度变化的高度可调谐的EB场。异质结构的磁深度分布提供了令人信服的证据，证明在LCMO/CMO界面的LCMO层中，无论堆叠顺序如何，都存在磁抑制区。最后，在LCMO层的磁性界面处建立EB。
Rich exchange bias (EB) behaviors were previously observed when ferromagnetic (FM) materials contacted a spin glass, demonstrating magnetic degrees of freedom of the coupling between the glass and FM spins. However, the correlation between the degree of magnetic spin frustration and the strength of the resulting EB is far from being understood. Here, we systematically investigate the dependency of EB on interfacial spin frustration in magnetic complex oxide heterostructures including La0.7Ca0.3MnO3/CaMnO3 (LCMO/CMO) systems. The experimental analysis revealed that the extent of interfacial spin frustration is determined by the subtle competition between different types of magnetic orders related to the glassy spin behaviors at the interface. Such spin frustration can be manipulated through strain engineering through changes in the Mn eg orbital by alternating the stacking sequence of the heterostructures. A highly tunable EB field with 95% change of strength between the highly and weakly frustrated heterostructures has been achieved. Magnetic depth profiles of the heterostructures provide convincing evidence that a magnetically depressed region always occurs in the LCMO layer at the LCMO/CMO interfaces irrespective of the stacking sequence. Finally, EB is established at the magnetic interface in the LCMO layer.