Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography
Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography
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DOI：
10.1016/j.matlet.2014.01.157
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发表时间：
2014-04
影响因子：
3
通讯作者：
W. Kim;J. Son
中科院分区：
文献类型：
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作者：
W. Kim;J. Son
报道了采用可控蘸笔纳米光刻（DPN）工艺在Nb掺杂的SrTiO 3衬底上制备的BiFeO 3纳米点的铁电响应和阻变特性。通过压电响应力显微镜（piezoresponse force microscopy，PFM）测试，证实了BiFeO3纳米点具有良好的铁电响应和开关特性。更有趣的是，基于使用导电原子力显微镜（CAFM）技术的电流-电压特性，我们观察到单极电阻开关行为的BiFeO3纳米点。此外，随着开关周期增加到200个周期，发现双电阻开关特性是可再现的，这表明下一代RRAM存储器器件的未来适用性。
We report the ferroelectric response and resistive switching characteristics of a BiFeO3nanodot on a Nb-doped SrTiO3substrate, prepared by elaborately controllable dip-pen nanolithography (DPN) process. By performing piezoresponse force microscopy (PFM) measurements, it is confirmed that the BiFeO3nanodot exhibited good ferroelectric response and switching properties. More interestingly, based on current–voltage characterizations using a conducting atomic force microscope (CAFM) technique, we observed unipolar resistive switching behavior in the BiFeO3nanodots. In addition, the bistable resistive switching characteristics were found to be reproducible with increasing the switching cycle up to 200 cycles, suggesting the future applicability for next generation RRAM memory devices.