Physical Characterization of the Metal/High-k Layer Interaction upon Annealing
Physical Characterization of the Metal/High-k Layer Interaction upon Annealing
复制标题
退火时金属/高 k 层相互作用的物理表征
DOI：
10.1149/1.2981624
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Conard T
中科院分区：
文献类型：
--
作者：
Conard T
在栅堆叠中用金属化合物取代多晶硅导致了对具有合适功函数的金属的寻找。然而，观察到热平衡对几种金属的有效功函数有很大的影响。本文通过对高k氧化物/金属界面化学的研究，探讨了用物理分析技术(XPS、XRR、MEIS、TOF-SIMS)改变化学状态的可能性。结果表明，在TiN/TaN/HfO2/SiO_2/Si堆叠的情况下，1000℃氮气退火后发生了几个变化：TaN的氮含量增加，Ti和TaN的互扩散，以及Ta2O5在TaN/HfO2界面的形成。
The replacement of poly-silicon by metallic compounds in the gate stack leads to the search of metals with suitable work function. However, it is observed that thermal budget has a large influence on the effective work functions of several metals. In this paper, we investigated the possible modification of the chemical states by physical analysis techniques (XPS, XRR, MEIS, TOF-SIMS) by studying the chemistry of the high-k oxide/metal interface. We show that in the case of the TiN/TaN/HfO2/SiO2/Si stack, several modifications occur upon 1000C N2 annealing: Increase of the nitrogen content of the TaN, interdiffusion of the Ti and TaN, and formation of Ta2O5 at the TaN/HfO2 interface.