Homoepitaxial growth of silicon on anodized porous silicon
Homoepitaxial growth of silicon on anodized porous silicon
复制标题
在阳极氧化多孔硅上同质外延生长硅
DOI：
10.1016/0169-4332(90)90095-h
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发表时间：
1990
影响因子：
6.7
通讯作者：
A. Hiraki
中科院分区：
文献类型：
--
作者：
Tsuyohito Ito;T. Yasumatsu;A. Hiraki
采用电子能谱、电子衍射、扫描电镜（SEM）和卢瑟福后向散射光谱（RBS）等方法研究了Si（111）在阳极法制备的单晶多孔硅（PS）上的同外延生长。利用电子束蒸发器，在预氧化的PS上沉积了≤120 nm的Si。随着Si层厚度的增加，电子衍射图从扩散的弱“1 × 1”到强“1 × 1”（1 nm），再到弱“7 × 7”（6 nm），最后到尖锐的强“7 × 7”（8 ~ 120 nm）。这一演变过程与Si生长120 nm后的非原位RBS数据和SEM照片进行了比较。两者都观察到沟道的χ 2 = 2.6%，并且高分辨率SEM图像显示外延Si薄膜的表面非常光滑和平坦，与原位衍射数据一致。这些结果与孔隙结构的关系进行了讨论。
Homoepitaxial growth of Si(111) on monocrystalline porous silicon (PS) anodically produced has been investigated by means of electron spectroscopies, electron diffraction, scanning electron microscopy (SEM) and Rutherford backscattering spectrometry (RBS). Si depositions of ⩽ 120 nm were performed on a pre-oxidized PS by using an electron beam evaporator. With increasing thickness of the deposited Si layer, the electron diffraction pattern evolved from a diffuse and weak “1 x 1” to a strong “1 x 1” (1 nm), further to a weak “7 x 7” (6 nm), and finally to sharp and strong “7 x 7” pattern (8–120 nm). This evolution is compared to ex-situ RBS data and SEM pictures taken after the Si growth of 120 nm. Both observed a channeling χminof 2.6% and high-resolution SEM images for the epitaxial Si film showing a very smooth and flat surface are consistent with the in-situ diffraction data. These results are discussed in relation to the pore structure.