High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity
High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity
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DOI：
10.1021/nl504860z
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发表时间：
2015-03-01
期刊：
影响因子：
10.8
通讯作者：
Englund, Dirk
中科院分区：
文献类型：
--
作者：
Gao, Yuanda;Shiue, Ren-Jye;Englund, Dirk
纳米级和高能效的电光(EO)调制器是光学互连的基本部件，它们正开始取代用于芯片内和芯片间通信的电线。(1-4)硅基EO调制器在器件占地面积、速度、功耗和调制深度方面表现出足够的优点。(5-11)然而，硅的微弱电光效应仍然为这些器件设置了技术瓶颈，推动了基于新材料的调制器的发展。石墨烯是一种二维碳同素异形体，由于其特殊的光学和电学性质，已经成为一种可替代的光电应用材料。(12-14)在这里，我们展示了一种基于石墨烯-氮化硼(BN)异质结构和硅光子晶体纳米腔集成的高速石墨烯电光调制器。石墨烯在亚微米腔中强烈增强的光-物质相互作用使腔反射能够有效地电调谐。我们观察到了3.2分贝的调制深度和1.2 GHz的截止频率。
Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.(1-4) Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.(5-11) However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications., Owing to its exceptional optical and electronic properties.(12-14) Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.