Enhanced broadband RF detection in nanoscale magnetic tunnel junction by interface engineering

Enhanced broadband RF detection in nanoscale magnetic tunnel junction by interface engineering
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通过界面工程增强纳米级磁隧道结的宽带射频检测

DOI:
10.1021/acsami.9b06706
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发表时间:
2019
影响因子:
9.5
通讯作者:
Zhongming Zeng
Zhongming Zeng
中科院分区:
材料科学2区
文献类型:
--
作者:
Like Zhang;Bin Fang;Jialin Cai;Weican Wu;Baoshun Zhang;Bochong Wang;Pedram Khalili Amiri;Giovanni Finocchio;Zhongming Zeng

文献摘要

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宽带射频检测因其在无线充电和能量采集方面的潜在应用而引起人们的极大兴趣。在这里,我们证明了基于磁隧道结(MTJ)的自旋扭矩二极管的宽带射频探测带宽可以通过设计CoFeB自由层和MgO隧道势垒之间的垂直磁各向异性(PMA)来提高。在MTJ中观察到了超过3 GHz的超宽带射频检测带宽,并且可以通过调节自由层PMA来调制宽带射频检测行为。此外,对于厚度约为1.65 nm的自由层,即使在没有任何外加偏置场的情况下,也可以实现宽的RF检测带宽(约1.8 GHz)。最后讨论了外加磁场和射频功率对宽带射频探测带宽的影响。我们的结果为未来便携式纳米电子学的射频能量采集铺平了道路。
Broad-band radio frequency (RF) detection is of great interest for its potential applications in wireless charging and energy harvesting. Here, we demonstrate that the bandwidth of broad-band RF detection in spin-torque diodes based on magnetic tunnel junctions (MTJs) can be enhanced through engineering the interface perpendicular magnetic anisotropy (PMA) between the CoFeB free layer and the MgO tunnel barrier. An ultrawide RF detection bandwidth of over 3 GHz is observed in the MTJs, and the broad-band RF detection behavior can be modulated by tuning the free layer PMA. Furthermore, a wide RF detection bandwidth (about 1.8 GHz) can be realized even without any external bias field for free layers with a thickness of about 1.65 nm. Finally, the dependence of the broad-band RF detection bandwidth on external magnetic field and RF power is discussed. Our results pave the way for RF energy harvesting for future portable nanoelectronics.