Simulations for InAlAs digital alloy avalanche photodiodes
Simulations for InAlAs digital alloy avalanche photodiodes
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DOI：
10.1063/1.5114918
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发表时间：
2019-10
影响因子：
4
通讯作者：
J. Zheng;Y. Yuan;Y. Tan;Y. Peng;A. Rockwell;S. Bank;A. Ghosh;J. Campbell
中科院分区：
文献类型：
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作者：
J. Zheng;Y. Yuan;Y. Tan;Y. Peng;A. Rockwell;S. Bank;A. Ghosh;J. Campbell
3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve and excess noise factor fit well with experimental results. Ionization coefficients calculated by the Monte Carlo technique were incorporated into the recurrence model, which is easier to implement and requires less computation time.3D band structure-based Monte Carlo simulations have been utilized to simulate InAlAs digital alloy avalanche photodiodes. The simulated current–voltage curve and excess noise factor fit well with experimental results. Ionization coefficients calculated by the Monte Carlo technique were incorporated into the recurrence model, which is easier to implement and requires less computation time.
