Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
复制标题
DOI：
10.1143/jjap.45.l730
复制
发表时间：
2006-07
影响因子：
1.5
通讯作者：
Xinqiang Wang;S. Che;Y. Ishitani;A. Yoshikawa
中科院分区：
文献类型：
--
作者：
Xinqiang Wang;S. Che;Y. Ishitani;A. Yoshikawa
采用分子束外延技术在GaN模板上实现了InN外延层的阶跃流动生长。观察到了均匀的阶梯结构，阶梯高度为1个单层。在10×10微米的面积上，表面均方根粗糙度小于1 nm。为了获得阶跃流动模式的生长，最好在反极性生长区域中使用略富In的生长条件、低位错密度的GaN模板和较高的外延温度。块体InN的典型电子浓度为5-6×1017 cm-3，霍尔迁移率为1400cm2/(V S)。
The step-flow mode growth of an In-polar InN epilayer on a GaN template was achieved by molecular beam epitaxy. A uniform terrace structure was observed with a step height of one monolayer. The surface rms roughness was less than 1 nm over a 10×10 µm2 area. To obtain the step-flow mode growth, it was preferable to use a slightly In-rich growth condition in the In-polarity growth regime, a GaN template of low dislocation density, and a high epitaxial temperature. A typical electron concentration of bulk InN was 5–6×1017 cm-3 with a Hall mobility of 1400 cm2/(V s).