Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers
Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers
复制标题
DOI：
10.1063/1.3633268
复制
发表时间：
2011-08
影响因子：
4
通讯作者：
Y. Kuo;Tsun-Hsin Wang;Jih-Yuan Chang;Miao‐Chan Tsai
中科院分区：
文献类型：
--
作者：
Y. Kuo;Tsun-Hsin Wang;Jih-Yuan Chang;Miao‐Chan Tsai
研究了GaN-InGaN-GaN势垒InGaN发光二极管的优点。研究了量子威尔斯的能带图、量子阱中载流子浓度、有源区中的辐射复合率、光电流特性曲线和内量子效率。模拟结果表明，InGaN/GaN-InGaN-GaN发光二极管的能带图经过适当的调整，有利于电子和空穴的注入，有利于载流子在量子威尔斯阱中的均匀分布，从而使发光二极管的性能优于传统的InGaN/GaN和InGaN/InGaN发光二极管。
The advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers are studied. The energy band diagrams, carrier concentrations in the quantum wells, radiative recombination rate in the active region, light-current performance curves, and internal quantum efficiency are investigated. The simulation results show that the InGaN/GaN-InGaN-GaN light-emitting diode has better performance over its conventional InGaN/GaN and InGaN/InGaN counterparts due to the appropriately modified energy band diagrams which are favorable for the injection of electrons and holes and uniform distribution of these carriers in the quantum wells.