Electrochemical Formation of Ca-Si in Molten CaCl2-KCl
Electrochemical Formation of Ca-Si in Molten CaCl2-KCl
复制标题
熔融 CaCl2-KCl 中 Ca-Si 的电化学形成
DOI：
10.1149/2.1021504jes
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发表时间：
2015
影响因子：
3.9
通讯作者：
Kan Hachiya
中科院分区：
文献类型：
--
作者：
Yoshihide Sakanaka;Takuya Goto;Kan Hachiya
研究了 923 K 熔融 CaCl 2-KCl 中 Ca-Si 膜的电化学形成。 Si电极在-0.10V下恒电位电解1小时导致形成厚度约30μm的多相Ca-Si膜。在− 0.10 V 下阴极电沉积 Ca 金属后，通过阳极恒电位电解将 Ca-Si 薄膜转化为其他合金相。各种转化反应和相应的平衡电位得到了阐明。在 923 K 时，发现平衡电势为 0.18 V (CaSi 2)。紫外、可见光和近红外区域的反射率测量表明CaSi 2 薄膜的直接带隙为3.1 eV。
Electrochemical formation of a Ca-Si film in a molten CaCl 2-KCl at 923 K was investigated. Potentiostatic electrolysis of a Si electrode at− 0.10 V for 1 h resulted in the formation of a multiphase Ca-Si film having a thickness of about 30 μm. The Ca-Si film was converted into other alloy phases by anodic potentiostatic electrolysis after the cathodic electrodeposition of Ca metal at− 0.10 V. The various transformation reactions and the corresponding equilibrium potentials were clarified. At 923 K, the equilibrium potential was found to be 0.18 V (CaSi 2). Reflectance measurements in the ultraviolet, visible, and near-infrared region clarified that the CaSi 2 film has a direct bandgap of 3.1 eV.