Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
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DOI：
10.1063/1.2970997
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发表时间：
2008-08-18
影响因子：
4
通讯作者：
Huffaker, D. L.
中科院分区：
文献类型：
--
作者：
Huang, S. H.;Balakrishnan, G.;Huffaker, D. L.
作者描述了在高度失配(a(0)/a(0)=13%)的AlSb衬底中同时形成界面失配(IMF)阵列和抑制反相畴(APD)的方法。AlSb/Si异质结的应变能被限制在界面上的纯90度位错自组装的二维阵列所吸收。13%的晶格失配建立了类似于3.46 nm的AlSb/SiIMF周期。这个IMF间距与5度错切的Si(001)衬底的步长很好地匹配。此外，由于双台阶高度，误切割的衬底几何结构抑制了雪崩的形成。由透射电子显微镜图像证实，所得到的块状材料既具有很低的缺陷密度(类似于7×10(5)/cm(2))，又具有很低的apd密度(类似于10(3)/cm(2))。这种材料有望用于硅衬底上的电子III-V器件。(C)2008年美国物理研究所。
The authors describe simultaneous interfacial misfit (IMF) array formation along with antiphase domain (APD) suppression in highly mismatched (Delta a(0)/a(0)= 13%) AlSb grown on a 5 degrees miscut Si (001) substrate. Strain energy from the AlSb/Si heterojunction is accommodated by a self-assembled two-dimensional array of pure 90 degrees dislocations confined to the interface. The 13% lattice mismatch establishes the AlSb/Si IMF period of similar to 3.46 nm. This IMF spacing is well matched to the step length of the 5 degrees miscut Si (001) substrate. Furthermore, the miscut substrate geometry suppresses APD formation due to the double step height. The resulting bulk material has both very low defect density (similar to 7x10(5) /cm(2)) and very low APD density (similar to 10(3) /cm(2)) confirmed by transmission electron microscope images. This material is expected to be desirable for electronic III-V devices on Si substrates. (c) 2008 American Institute of Physics.