Tem Of Dislocations Under High Stress In Germanium And Doped Silicon
Tem Of Dislocations Under High Stress In Germanium And Doped Silicon
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锗和掺杂硅高应力下位错温度
DOI：
10.1111/j.1365-2818.1980.tb00241.x
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发表时间：
1980
影响因子：
2
通讯作者：
S. Wendler
中科院分区：
文献类型：
--
作者：
H. Alexander;H. Eppenstein;H. Gottschalk;S. Wendler
测定了硅(58±6mJ m−2)和锗(75±10mJ m−2)的层错能y。在精确度范围内，掺入13.8molm−3(8×1018 cm−3)硼和1.17molm−3(7×1017 cm−3)磷时，未发现PTC的变化。位错在高剪应力下的冻结显示了螺旋位错的不同行为：这些位错在纯硅和p-硅中变宽，而在n-硅中变窄。由此我们得出结论，在n-硅和p-硅中，两个30°部分的迁移率之比是不同的。文中还提到了有关冻结位错的其他观察结果。
The stacking fault energies y of silicon (58 ± 6 mJ m−2) and germanium (75 ± 10 mJ m−2) were determined. Within the limits of accuracy γ was not found to change on doping with (13·8 mol m−3 (8 × 1018 cm−3) boron, and 1·17 mol m−3 (7 × 1017 cm−3) phosphorus). Freezing in dislocations under high shear stress reveals a different behaviour of screw dislocations: whereas these dislocations become wider in pure and p‐silicon, they become narrower in n‐silicon. From this we conclude the ratio of mobilities of the two 30° partials to be different in n‐ and p‐silicon. Other observations on frozen dislocations are mentioned.