van der Waals epitaxy of CdTe thin film on graphene
van der Waals epitaxy of CdTe thin film on graphene
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DOI：
10.1063/1.4964127
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发表时间：
2016-10
影响因子：
4
通讯作者：
D. Mohanty;W. Xie;Yiping Wang;Zonghuan Lu;Jian Shi;Shengbai Zhang;Gwo-Ching Wang;T. Lu;I. Bhat
中科院分区：
文献类型：
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作者：
D. Mohanty;W. Xie;Yiping Wang;Zonghuan Lu;Jian Shi;Shengbai Zhang;Gwo-Ching Wang;T. Lu;I. Bhat
范德华外延（vdWE）有利于与衬底具有较大晶格失配的材料的外延生长。尽管 2D 材料上的二维 (2D) 材料的 vdWE 已被广泛研究，但 2D 基底上的三维 (3D) 材料的 vdWE 仍然是一个挑战。人们认为 2D 基板传递的信息很少来决定 3D 生长。在本文中，我们展示了使用金属有机化学气相沉积技术在石墨烯缓冲的 SiO2/Si 衬底上 VdWE 生长 CdTe(111) 薄膜，尽管 CdTe 和石墨烯之间存在 46% 的大晶格失配，并且对称性从立方变为六方。我们的 CdTe 薄膜产生非常窄的 X 射线摇摆曲线，X 射线极图分析显示在 70° 的 chi 角处有 12 个 CdTe (111) 峰。这归因于石墨烯上 CdTe 的两组平行外延，相对方向成 30°，从而在极图中产生 12 倍对称性。第一性原理计算表明，...
van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that,...