Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy
Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy
复制标题
高纯Fe源对分子束外延生长p型β-FeSi2输运特性的影响
DOI：
10.1063/1.2816230
复制
发表时间：
2007
影响因子：
3.2
通讯作者：
M. Isshiki
中科院分区：
文献类型：
--
作者：
M. Suzuno;Y. Ugajin;S. Murase;T. Suemasu;M. Uchikoshi;M. Isshiki
采用分子束外延技术，分别使用低纯度（4 N）和高纯度（5 N）Fe源在Si（111）衬底上生长了p型非掺杂β-FeSi 2薄膜，研究了高纯Fe源对β-FeSi 2薄膜电学性能的影响。随着退火温度和退火时间的增加，空穴迁移率增加，空穴密度降低，特别是对于用5 N-Fe制备的β-FeSi 2薄膜。通过考虑各种载流子散射机制，由于声学声子，极化光学声子，非极化光学声子，和离子化杂质的空穴迁移率的温度依赖性被很好地再现。
Intentionally undoped p-type β-FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of β-FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the β-FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.
Si/Fe多层膜生长的p型β-FeSi_2薄膜的空穴迁移率
DOI：
--
发表时间：
2005
期刊：
Journal of Applied Physics 96
影响因子：
--
作者：
Tange;Amano;Nishizaki;Yoshizaki;K.Takakura et al.
通讯作者：
K.Takakura et al.
Si/Fe多层膜生长p型β-FeSi_2薄膜的空穴迁移率
DOI：
--
发表时间：
2005
期刊：
Journal of Applied Physics 96
影响因子：
--
作者：
S.Seki;H.Tamura;S.Horita;N.Ito;K.Takakura et al.
通讯作者：
K.Takakura et al.