First-principles predictions of Hall and drift mobilities in semiconductors
First-principles predictions of Hall and drift mobilities in semiconductors
复制标题
DOI：
10.1103/physrevresearch.3.043022
复制
发表时间：
2021-05
影响因子：
4.2
通讯作者：
S. Poncé;Francesco Macheda;E. R. Margine;N. Marzari;N. Bonini;F. Giustino
中科院分区：
文献类型：
--
作者：
S. Poncé;Francesco Macheda;E. R. Margine;N. Marzari;N. Bonini;F. Giustino
Samuel ponc<s:1>,∗Francesco Macheda, Elena Roxana Margine, Nicola Marzari, Nicola Bonini， and Feliciano Giustino 5材料理论与模拟（THEOS）， École洛桑理工学院，CH-1015洛桑，瑞士伦敦国王学院物理系，Strand, London WC2R 2LS，英国宾厄姆顿大学- suny物理系，宾厄姆顿，NY 13902，美国奥登计算工程与科学研究所德克萨斯大学奥斯汀分校物理系，德克萨斯大学奥斯汀分校，奥斯汀，德克萨斯78712，美国（日期：2021年5月11日）
Samuel Poncé, ∗ Francesco Macheda, Elena Roxana Margine, Nicola Marzari, Nicola Bonini, and Feliciano Giustino 5 Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland Department of Physics, King’s College London, Strand, London WC2R 2LS, United Kingdom Department of Physics, Applied Physics and Astronomy, Binghamton University-SUNY, Binghamton, NY 13902, USA Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712, USA Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA (Dated: May 11, 2021)